The MOVPE Hg 1-xCd xTe epitaxial film, LPE Hg 1-xCd xTe epitaxial film and Hg 1-xCd xTe bulk wafers grown by ACRT-Bridgman and Te solvent methods were measured by means of Raman microscopy in the room temperature. In all the experimental specimen, the micro-Photoluminescence emission centered above the bottom of Hg 1-xCd xTe conduction band about 1.5eV were observed for the first time. It is confirmed that the micro-photoluminescence was induced by the Te ion vacancy resonance level.
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黄晖 许京军 等. Hg1—xCdxTe材料中的Te离子空位共振能级[J].红外与毫米波学报,2003,22(1):27~30]. HUANG Hui ) XU Jing-Jun ) ZHANG Cun-Zhou ) ZHANG Guang-Yin ). Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS[J]. J. Infrared Millim. Waves,2003,22(1):27~30.]
