半绝缘GaAs的表面光伏谱研究
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TN304.23

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中国科学院资助项目,69876037,


THE INVESTIGATIONS ON SEMI-INSULATING GaAs BY SURFACE PHOTOVOLTAIC SPECTROSCOPY
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    摘要:

    利用表面光伏法(SPV)研究了半绝缘GaAs(SI-GaAs)的缺陷态,通过加直流光偏置测量了室温下带边以下的光伏响应,发现带隙内缺陷态的光伏向应主要是由于表面复合而在样品表面形成协流子浓度梯度引起的,通过实验表明SPV是一种对SI-GaAs晶片表面质量进行检测的非常灵敏的无损检测方法。

    Abstract:

    The surface photovoltage (SPV) effect induced by the defect states in semi-insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a dc optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI-GaAs wafers.

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陈宜保 江德生.半绝缘GaAs的表面光伏谱研究[J].红外与毫米波学报,2000,19(1):15~18]. CHEN Yi-Bao, JIANG De-Sheng, WANG Ruo-Zhen, HENG Hong-Jun, SUN Bao-Quan. THE INVESTIGATIONS ON SEMI-INSULATING GaAs BY SURFACE PHOTOVOLTAIC SPECTROSCOPY[J]. J. Infrared Millim. Waves,2000,19(1):15~18.]

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  • 最后修改日期:1999-04-14
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