Energy levels E(0.42eV), H(0.61eV), E(0.66eV) and H(0.69eV) are introduced by the existence of the 4d transition impurities Mo and Pd, respectively, in GaAs. Based on the optical-electric behavior of transition impurities Mo and Pd in GaAs, it is suggested that these impurities do not act as effective recombination centers in GaAs.
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周洁 马红. GaAs中4d过渡杂质Mo与Pd的光电行为[J].红外与毫米波学报,1993,12(2):135~138]. ZHOU JIE, MA HONG, LU LIWU, HAN ZHIYONG. THE OPTO-ELECTRIC BEHAVIOR OF 4d TRANSITION IMPURITIES Mo AND Pd IN GaAs[J]. J. Infrared Millim. Waves,1993,12(2):135~138.]
