A simple HWE apparatus and the technology of using this appparatus to grown ZnSe single crystal epilayers on GaAs [100] plane are reported. The analysis of scanning electron microscope and X-ray diffraction shows that the epilayer of ZnSe single crystal is perfect.
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杨玉琨 吴连民.热壁外延ZnSe单晶薄膜[J].红外与毫米波学报,1991,10(1):57~60]. YANG YUKUN, WU LIANMIN, MENG QINGJU, WANG HAIFENG, YANG HUI, SUN MINGYAN. HWE GROWN ZnSe SINGLE CRYSTAL FILM~*[J]. J. Infrared Millim. Waves,1991,10(1):57~60.]
