The results of a Cl2/ N2 inductively coupled plasma (ICP) reactive ion etching process on InAs/GaSb superlattices infrared focal plane arrays were reported. A standard PIN device structure based on GaSb substrate was applied in all samples grown by molecular beam epitaxy. The etching results including etching rate and mesa sidewall profile were affected by gas flow directly, The higher the chlorine content, the higher the etching rate, when the argon content increased, the etching rate decreased and tended to a certain value. When other parameters such as chamber pressure et al. were fixed, the etching rate and selection ratio increased linearly with temperature, and the mesa tended to be right angle, layered texture profile gradually disappeared, but the channel became rough and even pitted. Within the scope of the experimental study, the ICP power and RF power had little effect on the etching results.