基于量子阱带间跃迁的红外探测器原型器件
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中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所,中国科学院物理研究所

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A prototype photon detector based on interband transition of quantum wells
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Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

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    摘要:

    近期,实验发现PN结中局域载流子具有极高提取效率,并导致吸收系数的大幅度增加。本文报道基于上述现象的新型量子阱带间跃迁红外探测器原型器件的性能。利用含有InGaAs/GaAs多量子阱的PIN二极管,在无表面减反射膜的实验条件下,利用仅100nm的有效吸收厚度,实现了31%的外量子效率。基于该数值推算得到,量子阱的光吸收系数达3.7×104 cm-1,该数值高于传统透射实验测量结果一个数量级。上述实验结果指出,利用量子阱带间跃迁工作机制,有望实现新颖的器件结构设计和提高现有器件性能。

    Abstract:

    Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells. The external quantum efficiency was measured to be 31% using only 100nm effective absorption thickness without an anti-reflection layer. Such high value leads to an absorption coefficient of 3.7×104 cm-1 which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors.

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刘洁,王禄,江洋,马紫光,王文奇,孙令,贾海强,王文新,陈弘.基于量子阱带间跃迁的红外探测器原型器件[J].红外与毫米波学报,2017,36(2):129~134]. LIU Jie, WANG Lu, JIANG Yang, MA Zi-Guang, WANG Wen-Qi, SUN Ling, JIA Hai-Qiang, WANG Wen-Xin, CHEN Hong. A prototype photon detector based on interband transition of quantum wells[J]. J. Infrared Millim. Waves,2017,36(2):129~134.]

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  • 收稿日期:2016-08-23
  • 最后修改日期:2016-09-13
  • 录用日期:2016-10-08
  • 在线发布日期: 2017-04-28
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