大功率高效率2μm锑化镓基量子阱激光器
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中国科学院半导体研究所 超晶格与微结构国家重点实验室,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所

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国家重点基础研究发展计划(973计划);国家自然科学基金项目(面上项目,重点项目,重大项目)


High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm
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State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences

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    摘要:

    通过MBE外延系统生长了2 μm GaSb基AlGaAsSb/InGaSb I型量子阱激光器, 并制备了宽面条形波导激光器件, 在20℃工作温度下, 器件最大连续激射功率达到1.058 W, 当注入电流为0.5 A时, 峰值波长为1977μm, 最大能量转换效率为20.2%, 在脉冲频率为1 000 Hz, 占空比为5%的脉冲工作模式下, 最大激射功率为2.278 W.

    Abstract:

    GaSb-based AlGaAsSb/InGaSb type-I quantum-wells (QW) 2 μm laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20℃. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.

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廖永平,张宇,杨成奥,黄书山,柴小力,王国伟,徐应强,倪海桥,牛智川.大功率高效率2μm锑化镓基量子阱激光器[J].红外与毫米波学报,2016,35(6):672~675]. LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. J. Infrared Millim. Waves,2016,35(6):672~675.]

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  • 收稿日期:2016-03-25
  • 最后修改日期:2016-04-19
  • 录用日期:2016-04-22
  • 在线发布日期: 2016-12-07
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