A novel electrode structure for mesa-arrayed infrared detectors is proposed. A relayed electrode at the bottom of the trench is realized by depositing the electrode twice separately. Comparing with the traditional extended electrode, the novel electrode structure is not only beneficial to simplify the electrode introducing at the bottom of the trench out from the bottom to the top of the trench, but also capable of enlarging the top area on the mesa arrays for other processes and enhancing the structural integration correspondingly. The height and morphology of the relayed electrode were not changed after experiencing 200 W ultrasonic treatment for 5 mins. As shown in the cross-sectional SEM pictures of the flip-chip bonded devices, the relayed electrode at the bottom of the trench connected into a whole and reached the metallization pads on the other side. These results indicated that this new electrode structure can be applied to the mesa-arrayed infrared detectors.