(英)一种新型低暗计数率单光子雪崩二极管的设计与分析
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湘潭大学物理与光电工程学院、湖南省微光电与系统集成实验室,湘潭大学物理与光电工程学院、湖南省微光电与系统集成实验室,湘潭大学物理与光电工程学院、湖南省微光电与系统集成实验室,湘潭大学物理与光电工程学院、湖南省微光电与系统集成实验室,湘潭大学物理与光电工程学院、湖南省微光电与系统集成实验室

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Design and analysis of a novel low dark count rate SPAD
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School of Physics and Optoelectronics, Xiangtan University,School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip,School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip,School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip,School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip

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    摘要:

    基于0.18 μm互补金属氧化物半导体(CMOS) 图像传感器工艺提出一种新型的低暗计数率(Dark Count Rate)单光子雪崩二极管(SPAD)器件.该器件是利用P+/LNW(Light N-well doping)结检测光子,并通过低浓度的N型扩散圆形保护环抑制边缘击穿,确保其工作在盖格模式.测试结果表明在室温环境下,直径为8 μm的SPAD器件,雪崩击穿电压为14.2 V,当过调电压设置为2 V时,暗计数率为260 Hz,具有低的暗计数率特性.

    Abstract:

    A novel low dark count rate single-photon avalanche diode (SPAD) device was designed and fabricated with the 0.18 μm CMOS Image Sensor (CIS) technology in this paper. The device is comprised of an effective P+/LNW (light N-well doping) junction for photon detecting and a low concentration N-type diffusing circular guard-ring formed by the deep N-well diffusion. The latter prevents premature edge breakdown (PEB) of the junction and ensures it to operate in Geiger mode. The measured results show that the SPAD achieves a low dark count rate (DCR), and the DCR is 260 Hz at an excess bias voltage of 2V for 8 μm diameter active area structure at room temperature.

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杨佳,金湘亮,杨红姣,汤丽珍,刘维辉.(英)一种新型低暗计数率单光子雪崩二极管的设计与分析[J].红外与毫米波学报,2016,35(4):394~397]. YANG Jia, JIN Xiang-Liang, YANG Hong-Jiao, TANG Li-Zhen, LIU Wei-Hui. Design and analysis of a novel low dark count rate SPAD[J]. J. Infrared Millim. Waves,2016,35(4):394~397.]

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  • 收稿日期:2015-08-23
  • 最后修改日期:2016-03-09
  • 录用日期:2016-03-10
  • 在线发布日期: 2016-09-09
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