硒化温度对Cu(In, Al)Se2薄膜结构和光学性质的影响
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华东师范大学 电子工程系 极化材料与器件教育部重点实验室,上海大学 微结构实验室,华东师范大学 电子工程系 极化材料与器件教育部重点实验室;绥化学院 电气工程学院,华东师范大学 电子工程系 极化材料与器件教育部重点实验室,华东师范大学 电子工程系 极化材料与器件教育部重点实验室,华东师范大学 电子工程系 极化材料与器件教育部重点实验室,华东师范大学 电子工程系 极化材料与器件教育部重点实验室,华东师范大学 电子工程系 极化材料与器件教育部重点实验室

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国家自然科学基金项目(61376129 和61474045)和国家重点基础研究项目(2013CB922300)共同资助。


The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se2 thin films
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Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University,Laboratory for Microstructures, Shanghai University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University; Department of Electrical Engineering, Suihua University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University

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    摘要:

    采用了磁控溅射制备Cu-In-Al金属前驱体薄膜,后硒化快速退火得到铜铟铝硒(Cu(In, Al)Se2,CIAS)薄膜.研究了硒化温度对CIAS薄膜晶体结构和光学性质的影响.研究发现CIAS薄膜的晶体结构依赖于硒化温度,其禁带宽度随硒化温度升高发生红移.研究结果表明,CIAS薄膜的最佳硒化温度为540 ℃,其晶体结构为纯黄铜矿结构,禁带宽度为1.34 eV,对应太阳电池理论最大效率的吸收层材料禁带宽度.

    Abstract:

    Cu(In, Al)Se2 (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.

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曹辉义,邓红梅,崔金玉,孟宪宽,张俊,孙琳,杨平雄,褚君浩.硒化温度对Cu(In, Al)Se2薄膜结构和光学性质的影响[J].红外与毫米波学报,2015,34(6):726~730]. CAO Hui-Yi, DENG Hong-Mei, CUI Jin-Yu, MENG Xian-Kuan, ZHNAG Jun, SUN Lin, YANG Ping-Xiong, CHU Jun-Hao. The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se2 thin films[J]. J. Infrared Millim. Waves,2015,34(6):726~730.]

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  • 收稿日期:2014-11-10
  • 最后修改日期:2015-09-23
  • 录用日期:2015-01-23
  • 在线发布日期: 2015-12-01
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