320×256元InAs/GaSb Ⅱ类超晶格长波红外焦平面探测器
作者:
作者单位:

中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室;中国科学院研究生院,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室,中国科学院红外成像材料与器件重点实验室

作者简介:

通讯作者:

中图分类号:

基金项目:

国家自然科学基金资助项目(61176082)


320×256 long wavelength infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice
Author:
Affiliation:

Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    报道了320×256元InAs/GaSb Ⅱ类超晶格长波红外焦平面阵列探测器的研制和性能测试.采用分子束外延技术在GaSb衬底上生长超晶格材料, 器件采用PBIN结构, 红外吸收区结构为14ML(InAs)/7ML(GaSb), 焦平面阵列光敏元尺寸为27μm×27μm, 中心距为30μm, 通过刻蚀形成台面、侧边钝化和金属接触电极生长, 以及与读出电路互连等工艺, 得到了320×256面阵长波焦平面探测器.在77K温度下测试,焦平面器件的100%截止波长为10.5μm, 峰值探测率为8.41×109cmHz1/2W-1, 盲元率为2.6%, 不均匀性为6.2%, 采用该超晶格焦平面器件得到了较为清晰的演示性室温目标红外热成像.

    Abstract:

    The growth and fabrication of a 320×256 type-Ⅱ InAs/GaSb superlattice long wavelength infrared focal plane array detector were reported. The superlattice material was grown on GaSb substrate using molecular beam epitaxy (MBE) technology with a PBIN structure. The structure of infrared absorption layer is 14ML (InAs)/7ML(GaSb), the focal plane array had a pixel size of 27μm×27μm and a pitch of 30μm. The device fabrication process consisted of mesa dry etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77K, the detector had a 100% cut-off wavelength of 10.5μm, and a peak detectivity of 8.41×109cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

    参考文献
    相似文献
    引证文献
引用本文

许佳佳,陈建新,周易,徐庆庆,王芳芳,徐志成,白治中,靳川,陈洪雷,丁瑞军,何 力.320×256元InAs/GaSb Ⅱ类超晶格长波红外焦平面探测器[J].红外与毫米波学报,2014,33(6):598~601]. XU Jia-Jia, CHEN Jian-Xin, ZHOU YI, XU Qing-Qing, WANG Fang-Fang, XU Zhi-Cheng, BAI Zhi-Zhong, JIN Chuan, CHEN Hong-Lei, DING Rui-Jun, HE Li.320×256 long wavelength infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice[J]. J. Infrared Millim. Waves,2014,33(6):598~601.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2014-03-25
  • 最后修改日期:2014-04-14
  • 录用日期:2014-04-17
  • 在线发布日期: 2014-11-27
  • 出版日期:
文章二维码