The lifetime of minority carrier as a function of temperature in n-HgCdTe treated by first anodization and second anodization was measured byμ-PCD and compared. The surface recombination velocity as a function of temperature was simulated from the calculated minority carrier lifetime and measured minority carrier lifetime. The results show that second anodization is an effective way to decrease the density of surface dangling bond and surface defect level, thus reduce the surface recombination velocity and increase the minority carrier lifetime which is beneficial to produce HgCdTe detector with high performance.