128x128元InAs/GaSb II类超晶格红外焦平面探测器
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中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室

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128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice
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Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    摘要:

    报道了128?128元InAs/GaSb II类超晶格红外焦平面阵列探测器的研究成果。实验采用分子束外延技术在GaSb衬底上生长超晶格材料。红外吸收区结构为13 ML(InAs)/9 ML(GaSb),器件采用PIN结构,焦平面阵列光敏元大小为40 μm ? 40 μm。通过台面形成、侧边钝化和金属电极生长,以及与读出电路互连等工艺,得到了128?128面阵长波焦平面探测器。在77 K 时测试, 器件的100%截止波长为8 μm,峰值探测率6.0?109 cmHz1/2 W-1。经红外焦平面成像测试,探测器可得到较为清晰的成像.

    Abstract:

    In this paper, we reported the growth and fabrication of a 128 ? 128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm?40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 μm, and a peak detectivity of 6.0?109 cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

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许佳佳,金巨鹏,徐庆庆,徐志成,靳川,周易,陈洪雷,林春,陈建新,何 力.128x128元InAs/GaSb II类超晶格红外焦平面探测器[J].红外与毫米波学报,2012,31(6):501~504]. XU Jia-Jia, JIN Ju-Peng, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, ZHOU Yi, CHEN Hong-Lei, LIN Chun, CHEN Jian-Xin, HE Li.128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. J. Infrared Millim. Waves,2012,31(6):501~504.]

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  • 收稿日期:2012-07-11
  • 最后修改日期:2012-09-27
  • 录用日期:2012-09-25
  • 在线发布日期: 2012-11-21
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