有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs
DOI:
作者:
作者单位:

西安电子科技大学微电子学院,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,西安电子科技大学微电子学院,中国科学院微电子研究所,中国科学院微电子研究所

作者简介:

通讯作者:

中图分类号:

基金项目:


High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm
Author:
Affiliation:

Microelectronics Institute, Xidian University,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Microelectronics Institute, Xidian University,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    成功研制了栅长为0.15 μm、栅宽为2×50 μm、源漏间距为2 μm 的InP 基In0.52Al0.48As/In0.53Ga0.47As高电子迁移率器件.室温下,当器件VDS为1.7 V、VGS为0.1 V时,其有效跨导达到了1 052 mS/mm.传输线方法(TLM)测试显示器件的接触电阻为0.032 Ω·mm,器件欧姆接触电阻率为1.03×10-7 Ω·cm-2. 正是良好的欧姆接触及其短的源漏间距减小了源电阻,进而使得有效跨导比较大.器件有比较好的射频特性.从100 MHz到40 GHz, S参数外推出来的fT 和fmax分别为151 GHz和303 GHz.所报道的HEMT器件非常适合毫米波段集成电路的研制.

    Abstract:

    0.15 μm gate-length InP-based In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) were successfully fabricated with gate-width of 2×50 μm and source-drain space of 2 μm. The maximum extrinsic transconductance (gmext) of 1 052 mS/mm was obtained under gate-source voltage (VGS) of 0.1 V and drain-source voltage (VDS) of 1.7 V at room temperature. Transmission Line Method (TLM) measurements revealed the contact resistance of 0.032 Ω·mm and the specific contact resistivity of 1.03×10-7 Ω·cm-2 on linear TLM patterns. Thus, markedly enhanced gmext was achieved by the superb Ohmic contact and the short source-drain space for minimizing series source resistance. These devices also demonstrated excellent RF characteristics. The fT and fmax extrapolated using the S-parameters measured from 100 MHz to 40 GHz were 151 GHz and 303 GHz, respectively. The HEMTs were promising for millimeter-wave band integrated circuits.

    参考文献
    相似文献
    引证文献
引用本文

钟英辉,王显泰,苏永波,曹玉雄,张玉明,刘新宇,金智.有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs[J].红外与毫米波学报,2013,32(3):193~198]. ZHONG Ying- Hui, WANG Xian-Tai, SU Yong-Bo, CAO Yu-Xiong, ZHANG Yu-Ming, LIU Xin-Yu, JIN Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm[J]. J. Infrared Millim. Waves,2013,32(3):193~198.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2012-03-01
  • 最后修改日期:2012-04-26
  • 录用日期:2012-04-28
  • 在线发布日期: 2013-06-14
  • 出版日期:
文章二维码