上海技术物理研究所,中国科学院上海技术物理研究所材料器件国防实验室,中国科学院上海技术物理研究所红外物理国家重点实验室,中国科学院上海技术物理研究所材料器件国防实验室,中国科学院上海技术物理研究所红外物理国家重点实验室,华东师范大学ECNU-SITP联合实验室
国家重点基础研究发展计划（973计划）;国家自然科学基金项目（面上项目，重点项目，重大项目）
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,ECNU-SITP Joint Laboratory for Image Information, East China Normal University,Shanghai
张小华,陈路,林铁,何力,郭少令,褚君浩.掺砷碲镉汞的光致发光光谱和电学性质[J].红外与毫米波学报,2012,31(5):407~410]. ZHANG Xiao-Hua, CHEN Lu, LIN Tie, HE Li, GUO Shao-Ling, CHU Jun-Hao. Photoluminescence and electrical characteristics of arsenic-doped HgCdTe[J]. J. Infrared Millim. Waves,2012,31(5):407~410.]
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