中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室
上海市自然科学基金(No. 10ZR1436300)；中科院红外成像材料与器件重点实验室开放课题；中科院上海微系统所青年创新基金
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
王凯,顾溢,方祥,周立,李成,李好斯白音,张永刚. InP衬底上晶格匹配四元系InAlGaAs的气态源分子束外延生长[J].红外与毫米波学报,2012,31(5):385~388]. WANG Kai, GU Yi, FANG Xiang, ZHOU Li, LI Cheng, LI Hao-Si-Bai-Yin, ZHANG Yong-Gang. Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE[J]. J. Infrared Millim. Waves,2012,31(5):385~388.]
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