When the step scanning Fourier Transform Infrared (FTIR) modulation Photoluminescence Spectroscopy (PL) is used for measurement, the background disturbance is eliminated by combining the superiority of FTIR with the advantages such as non-destruction, high sensitivity and convenient of PL, so as to enhance signal intensity. The influences of background noise, impurity level and temperature on the emission intensity and location in InAs/GaSb strain superlattice material are studied. By changing the measurement parameters, different measurement methods are summarized. The research results are of referential value to the epitaxy of InAs/GaSb strain superlattice materials and the subsequent processing of them.