The principle of Secondary Ion Mass Spectrometry (SIMS) and its importance in the manufacture of infrared semiconductor materials and Infrared Focal Plane Array (IRFPA) devices are presented. Through SIMS tests of As:doped HgCdTe and CdTe/InSb materials, the influences of different ion sources and primary beam intensity on test results are studied. The study lays a foundation for the further study of application of SIMS in infrared detector materials.