The current status, material property and development trend of InAlSb infrared detectors of foreign countries are summarized. Several different device structures and their performance are presented. The main design objective of InAlSb/InSb infrared detectors is to elevate the operating temperature by reducing the dark current. In recent years, the performance of InAlSb infrared detectors is improved continuously on the basis of the mature process and technology of traditional InSb detectors. This research is of significance and application value to the fields of infrared guidance, early warning, etc.