Two doped PbSe thin films PbSeIn and PbSeTe are fabricated by mid-frequency magnetron sputtering. The doping mechanisms of two elements In and Te and their influences on film properties are studied by combining theoretical simulation with practical experiments. The results show that the doping of In atoms is achieved mainly by substituting Pb atoms and that of Te is achieved mainly by substituting Se atoms. Compared with the undoped PbSe films, the photoelectric properties of both PbSeIn and PbSeTe films are improved certainly. The In doped PbSe film has the highest average resistance change rate. The photoelectric sensitivity of the PbSeTe film is close to that of the undoped PbSe film.