Antimonide superlattice infrared detectors have advantages such as good uniformity, low dark current, and high quantum efficiency. Furthermore, due to their flexible and tunable energy band structure, they can cover a detection wavelength range of 3－30 μm, making them a preferred technology for realizing high-performance short-wave, mid-wave, long-wave, and two-color infrared detectors. The Shanghai Institute of Technical Physics (SITP), Chinese Academy of Sciences, began developing superlattice infrared focal plane array technology during the 11th Five-Year Plan period. Over the past decade, SITP has achieved systematic breakthroughs and progress in superlattice energy band structure design, epitaxial growth of materials, focal plane array chip fabrication, dark current suppression in long-wave devices, and the engineering and industrialization of superlattices. Starting from the basic technical principles of antimonide superlattices, this paper summarizes the research progress of SITP in superlattice infrared detectors and provides a preliminary discussion of future development trends.