As the application of infrared detectors expands, higher requirements are placed on device weight, volume, heat dissipation, and application scenarios. This paper describes a high-operating temperature HgCdTe long-wave infrared detector with large charge handling capacity. Based on capacitance integration multiplexing, the device achieves a charge handling capacity of 27.2 Me^- at a 15 μm pixel size. The device performance at different operating temperatures is also analyzed. Results show that at 77 K, the device exhibits exceptional performance, with an effective pixel rate of 99.5%, a rear cutoff wavelength of 8.6 μm, a noise equivalent temperature difference (NETD) of 22 mK, and a peak quantum efficiency of 65%. As the operating temperature increases to 110 K, the effective pixel rate reaches 98.5%, with a rear cutoff wavelength of 8.1 μm, a NETD of 28 mK, and a peak quantum efficiency of 40%, achieving a state-of-the-art p-on-n type HgCdTe long-wave infrared detector. This research provides guidance for the fabrication of future high operating temperature devices.