High- and low-temperature cyclic annealing is one of the effective strategies to reduce the dislocation density of mercury cadmium telluride (HgCdTe) materials and is widely used to improve the quality of HgCdTe. The silicon-based HgCdTe material is heat treated using an off-site high- and low-temperature cyclic annealing process, and the effect of annealing conditions on the HgCdTe material is studied by designing an orthogonal experiment. The best annealing effect is obtained under the conditions of a temperature range of 250 ℃ to 450 ℃, a heating time of 5 min, and 12 cycles. The statistical dislocation density method is used to compare the dislocation changes of HgCdTe materials before and after annealing. Compared with the unannealed HgCdTe, the dislocation density of the annealed HgCdTe is reduced by about 80% to 1×10⁶－2×10⁶ cm^-2. The X-ray rocking curve test results show that the half-peak width of the silicon-based HgCdTe can be reduced to 75－80 arcsec after annealing. This study comprehensively improves the quality of silicon-based HgCdTe and provides a high-quality material foundation for the research and development of focal plane devices.