With the increasing application of large-scale infrared focal plane array detectors, users have put forward higher and higher requirements for the effective pixel rate index. The difficulty of improving the effective pixel rate is analyzed. By optimizing the processes such as substrate growth based on the vertical Bridgman method, and surface processing, the quality of liquid-phase epitaxy materials has been improved, and low-defect medium-wave HgCdTe thin-film epitaxy materials have been obtained. Through the development of back-side flattening process of HgCdTe detectors and optimization of flip-chip interconnection process for detector and readout circuit, the finished product rate is improved. Finally, the effective pixel rate index (greater than 99.8%) is improved, and good results are obtained.