The pixel-level digital infrared detector has higher performance and anti-interference ability, which is one of the important directions of infrared detector technology development. By breaking through key technologies such as pixel-level digital readout circuit design, low peak-valley HgCdTe material epitaxy, device fabrication process, and flip-chip connection, a 512×8 pixel-level digital long-wave infrared detector assembly is developed, and its performance is tested. The results show that this detector assembly can meet the system requirements, with spectral response range of 7.85-10.17 μm, average peak responsivity of 1.4×10¹¹ LSB/W, responsivity non-uniformity of 9.13%, operable pixel factor of 97.5%, noise equivalent temperature difference (NETD) of 4.4 mK and dynamic range of 90.6 dB.