一种具有大电荷处理能力的高工作温度碲镉汞长波红外探测器
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A High-Operating Temperature HgCdTe Long-Wave Infrared Detector with Large Charge Handling Capability
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    摘要:

    随着红外探测器应用领域的逐渐扩展,对器件的重量、体积、热耗、场景应用范围等方面提出了更高的要求。介绍了一种具有大电荷处理能力的高工作温度碲镉汞长波红外探测器。基于电容积分复用功能,在15 μm像元尺寸下,其电荷处理能力达到27.2 Me- 。同时分析了不同工作温度下的器件性能。结果表明,在77 K下器件具有极高性能,有效像元率为99.5%,后截止波长为8.6 μm,噪声等效温差(Noise Equivalent Temperature Difference, NETD)为22 mK,峰值量子效率为65%。随着工作温度提高到110 K,有效像元率为98.5%,后截止波长为8.1 μm,NETD为28 mK,峰值量子效率为40%,实现了p-on-n型碲镉汞长波红外探测器的一个较好的制备水平。该研究对未来高工作温度器件的制备具有一定的指导意义。

    Abstract:

    As the application of infrared detectors expands, higher requirements are placed on device weight, volume, heat dissipation, and application scenarios. This paper describes a high-operating temperature HgCdTe long-wave infrared detector with large charge handling capacity. Based on capacitance integration multiplexing, the device achieves a charge handling capacity of 27.2 Me- at a 15 μm pixel size. The device performance at different operating temperatures is also analyzed. Results show that at 77 K, the device exhibits exceptional performance, with an effective pixel rate of 99.5%, a rear cutoff wavelength of 8.6 μm, a noise equivalent temperature difference (NETD) of 22 mK, and a peak quantum efficiency of 65%. As the operating temperature increases to 110 K, the effective pixel rate reaches 98.5%, with a rear cutoff wavelength of 8.1 μm, a NETD of 28 mK, and a peak quantum efficiency of 40%, achieving a state-of-the-art p-on-n type HgCdTe long-wave infrared detector. This research provides guidance for the fabrication of future high operating temperature devices.

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邢艳蕾,宋淑芳.一种具有大电荷处理能力的高工作温度碲镉汞长波红外探测器[J].红外,2025,46(9):8-13.

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