分子束外延Si基碲镉汞材料的As掺杂研究
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Study on As-Doping of Si-Based HgCdTe Materials by Molecular Beam Epitaxy
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    摘要:

    为了制备出可靠性高、掺杂浓度可控的高质量碲镉汞(HgCdTe)材料,需对As掺杂后的HgCdTe材料特性进行研究。报道了分子束外延(Molecular Beam Epitaxy, MBE)硅基碲镉汞As掺杂技术。利用As裂解源作为As掺杂源,制备出高质量碲镉汞材料,其中As掺杂浓度可达到8×1018 cm-3。研究发现,As掺杂对生长温度、As束流、材料组分等材料生长参数十分敏感,通过改进生长温度控制以及衬底加热方式可实现As浓度在材料横向和纵向的均匀分布。利用两步退火法开展As激活退火。当As浓度低于3×1017 cm-3时,激活率趋于100%;随着As掺杂浓度的增加,激活率呈现下降趋势。

    Abstract:

    In order to prepare high-quality mercury cadmium telluride (HgCdTe) materials with high reliability and controllable doping concentration, the properties of HgCdTe materials after As doping need to be studied. The As doping technology of silicon-based HgCdTe by molecular beam epitaxy (MBE) is reported. Using As cracking source as As doping source, high-quality HgCdTe materials are prepared, in which the As doping concentration can reach 8×1018 cm-3. The study found that As doping is very sensitive to material growth parameters such as growth temperature, As beam current, and material composition. By improving the growth temperature control and substrate heating method, the uniform distribution of As concentration in the horizontal and vertical directions of the material can be achieved. As activation annealing is carried out by a two-step annealing method. When the As concentration is lower than 3×1017 cm-3, the activation rate tends to 100%; with the increase of As doping concentration, the activation rate shows a downward trend.

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王丹,李震,姜梦佳,等.分子束外延Si基碲镉汞材料的As掺杂研究[J].红外,2025,46(7):20-25.

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