In the chip accelerated life reliability test, temperature is the most important part. Firstly, based on the temperature change in the chip reliability test, the effect of high-temperature baking on the photoelectric performance of the InSb infrared detector chip is explored. Then, the types of blind pixels are classified, and the possible causes of pixel damage are summarized. Finally, the finite element analysis software is used to simulate and analyze the thermal stress of the detector structure, and further clarify the mechanism of chip fragmentation. It can be seen from the simulation results that the force at the center of the chip is relatively large, and its value is about 680 MPa, which is consistent with the phenomenon that the center of the InSb detector is prone to fatigue failure. A new way of studying the failure mechanism of InSb detectors is provided, which has certain practical guiding significance for the development of highperformance InSb infrared detectors.