High power 14xxnm strained quantum well lasers are the key devices of the fiber optic Raman amplifiers and rare earth doped fiber amplifiers. They can provide high power and wide band output and have the features of tunable dynamics, good frequency stability and low cost. In this paper, the material growth, device structures and package processing of 14xxnm semiconductor lasers are presented in detail, the difficulties in the growth of AlGaInAs material and the modification of the material structure are summarized and the ridge waveguide structure with a cone gain region which is the most effective approach to obtain good high power far field single-mode characteristics is indicated. The latest product performance and research status of the high power 14xxnm semiconductor lasers at home and abroad are reported and the potential difficulties for the further development of high power 14xxnm semiconductor lasers are pointed out.