| Abstract:Due to its excellent optical properties, silica (SiO2) films have the potential to be widely used in semiconductor devices, integrated circuits, optical coatings and other fields. However, there are some problems in the preparation of SiO2 films, such as surface roughness, impurity control, and compactness. To address these challenges, researchers are working to improve the performance of SiO2 films through process improvements and surface modifications. Among the many technologies for the preparation of SiO2 films, Plasma-Enhanced Chemical Vapor Deposition (PECVD) technology has become the most commonly used method for the preparation of SiO2 films due to the advantages of low temperature and in-situ growth of SiO2 films. In this paper, the development of SiO2 thin films prepared by PECVD technology is reviewed, and the effects of key process parameters and post-treatment processes on the quality of the films are discussed. Through the in-depth study of PECVD technology, more precise control of the growth of SiO2 thin films will be realized, and its wide application prospects will be further expanded. |