| 稀氮III-V族InAsN和InSbN中长波红外光电材料与器件 |
| 投稿时间：2011-12-22 修订日期：2011-12-29 点此下载全文 |
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| 基金项目:国家重点基础研究发展计划（973计划）;国家自然科学基金项目（面上项目，重点项目，重大项目）;中国科学院知识创新项目 |
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| 中文摘要:少量氮原子加入III-V半导体后引起能带减小,可实现能带结构裁剪。新型稀氮化物显示奇特的物理性质并具有应用到新型光电器件的潜力。备受关注的稀氮InAsN和InSbN在中长波红外光电材料上有巨大应用价值,并将在中长波红外器件应用领域发挥重要作用。 |
| 中文关键词:稀氮Ⅲ-Ⅴ族半导体,InAsN,InSbN,中长波红外器件 |
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| Novel dilute Ⅲ-Ⅴ InAsN and InSbN medium-long wave Infrared optoelectronic material and device |
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| Abstract:Small amount nitrogen atoms incorporated III-V semiconductor result in abnormal band bending, which remarkably tailor semiconductor band structure. These dilute nitride share peculiar physical properties and application potential to novel optoelectronic device. New dilute InAsN and InSbN material show significant application values in the field of medium-long wave infrared material, and play an important role in infrared devices application in future |
| keywords:dilute nitride III-V semiconductor, InAsN, InAsN, medium-long wave infrared optoelectronic device |
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