| 用于InSb探测器芯片的激光划片工艺方案简析 |
| 投稿时间：2018-11-21 修订日期：2018-11-28 点此下载全文 |
| 引用本文：李家发,曹立雅,张紫辰,侯煜.用于InSb探测器芯片的激光划片工艺方案简析[J].红外,2018,39(12):16~19 |
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| 中文摘要:针对InSb探测器芯片，基于紫外皮秒激光器搭建了定制化的光学平台和振镜系统。通过固定激光脉冲的重复频率，探讨了低能量多刀数以及高能量少刀数等工艺条件，获得了适合InSb探测器芯片激光划片的工艺条件。结果表明，热影响与崩边情况均可满足项目要求。 |
| 中文关键词:InSb材料 激光划片 热影响 崩边 |
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| Brief Analysis of Laser Scratching Technology for InSb Detector Chip |
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| Abstract:A system containing an optical platform and a galvanometer is set up for InSb detector chips on the basis of an ultraviolet picosecond laser. By fixing the laser pulse repetition frequency, different technological conditions such as low-energy multi-knife- number and high-energy less-knife-number are discussed and the technological conditions suitable for laser scribing of InSb detector chips are obtained. The results show that by using these technological conditions, both heat effect and edge breakage meet the requirements of the project. |
| keywords:InSb material laser scribing heat effect chipping |
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