| 碲镉汞光伏二极管的电流与结深研究 |
| 投稿时间：2018-11-01 修订日期：2018-11-16 点此下载全文 |
| 引用本文：祁娇娇,赵东升,徐长斌.碲镉汞光伏二极管的电流与结深研究[J].红外,2018,39(12):12~15 |
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| 中文摘要:采用Sentaurus TCAD 软件对 n-on-p型Hg1-xCdxTe红外探测器的结构进行了建模，并就结深对光伏二极管电流的影响进行了仿真和分析。结果表明，结深对电流的影响受吸收层厚度和p区载流子浓度两方面的作用。对不同波长二极管的电流随结深的变化情况进行了拟合，得出了不同波长条件下电流达到最大值时的结深大小。 |
| 中文关键词:Hg1-xCdxTe 结深 电流 |
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| Study of the Current and Junction Depth of Hg1-xCdxTe Photovoltaic Diode |
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| Abstract:The structure of a n-on-p Hg1-xCdxTe infrared detector is modeled by the Sentaurus TCAD software. The influence of junction depth on the current of a photovoltaic diode is simulated and analyzed. The results show that the influence of junction depth on the current of the diode is affected by the thickness of absorption layer and the carrier concentration in p region. The change of the diodes for different wavelengths with junction depth is fitted and the junction depth for maximal current at different wavelengths is obtained. |
| keywords:Hg1-xCdxTe junction current |
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