Because of the unique band structure and excellent properties, InAs/GaSb type-II superlattice material is regarded as the preference for the third-generation infrared detectors. In recent years, the material has been studied extensively and rapid advances are achieved. Molecular Beam Epitaxy (MBE) which can precisely control material interface and period thickness is the main means for superlattice material growth. Mid-wavelength and long-wavelength superlattice materials are grown on GaSb substrates by MBE. Their properties are characterized fully and are verified by the fabricated focal plane array devices eventually.