| 分子束外延InAs/GaSb II类超晶格材料 |
| 投稿时间：2017-09-06 修订日期：2017-09-22 点此下载全文 |
| 引用本文：邢伟荣,刘铭,郭喜,周朋,周立庆.分子束外延InAs/GaSb II类超晶格材料[J].红外,2017,38(12):17~20 |
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| 中文摘要:InAs/GaSb II类超晶格由于具有独特的能带结构和良好的材料性能被认为是第三代红外探测器的首选，近年来被广泛研究，并取得快速发展。分子束外延能够精确控制材料界面与周期厚度，是超晶格材料生长的主流手段。利用分子束外延技术在GaSb衬底上分别生长了中波、长波超晶格材料，并对所生长的超晶格材料的性能进行了全面表征，最后用制备的面阵器件验证了该材料的性能。} |
| 中文关键词:InAs/GaSb II类超晶格 分子束外延 红外探测器 |
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| InAs/GaSb Type-II Superlattice Material Grown by Molecular Beam Epitaxy |
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| Abstract:Because of the unique band structure and excellent properties, InAs/GaSb type-II superlattice material is regarded as the preference for the third-generation infrared detectors. In recent years, the material has been studied extensively and rapid advances are achieved. Molecular Beam Epitaxy (MBE) which can precisely control material interface and period thickness is the main means for superlattice material growth. Mid-wavelength and long-wavelength superlattice materials are grown on GaSb substrates by MBE. Their properties are characterized fully and are verified by the fabricated focal plane array devices eventually. |
| keywords:InAs/GaSb type-II superlattice molecular beam epitaxy infrared detector |
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