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线切割InSb晶片表面损伤研究
投稿时间:2017-08-28  修订日期:2017-09-03  点此下载全文
引用本文:柏伟,赵超.线切割InSb晶片表面损伤研究[J].红外,2017,38(11):16~19
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作者单位E-mail
柏伟 华北光电技术研究所 yiyangluoxue@126.com 
赵超 华北光电技术研究所  
中文摘要:利用扫描电子显微镜 (Scanning Electron Microscopy, SEM)、台阶仪和X射线衍射仪 (X-ray Diffraction, XRD) 研究了线切割InSb晶片和内圆切割晶片的表面损伤程度,定量分析了损伤层的厚度,并探讨了影响InSb切割晶片表面损伤的因素。结果表明,线切割InSb晶片的表面较平整,粗糙度小,表面损伤小,损伤层的厚度约为14 μm,小于常规内圆切割晶片。研究结果对大尺寸、大批量InSb晶片的生产及后续加工具有一定的参考价值。
中文关键词:InSb  线切割  内圆切割  表面损伤
 
Study of Surface Damage in Wire-electrode Cutting InSb Wafer
Abstract:The surface damage in both wire-electrode cutting InSb wafers and inside-diameter cutting (ID-cutting) InSb wafers was studied by means of Scanning Electron Microscopy (SEM), profilometer and X-ray diffraction (XRD). The thickness of the damage in InSb wafers was analyzed quantitatively. The factors that have influences on the surface damage in cutting InSb wafers were discussed. The results showed that the wire-electrode cutting InSb wafers had smooth surfaces, small roughness and small surface damage. The thickness of the damage layers in wire-electrode cutting InSb wafers was about 14 μm which was less than that of the ID-cutting InSb wafers. This research result was of referential value to the mass production and subsequent processing of large-size InSb wafers.
keywords:InSb  wire-electrode cutting  ID-cutting  surface damage
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