The surface damage in both wire-electrode cutting InSb wafers and inside-diameter cutting (ID-cutting) InSb wafers was studied by means of Scanning Electron Microscopy (SEM), profilometer and X-ray diffraction (XRD). The thickness of the damage in InSb wafers was analyzed quantitatively. The factors that have influences on the surface damage in cutting InSb wafers were discussed. The results showed that the wire-electrode cutting InSb wafers had smooth surfaces, small roughness and small surface damage. The thickness of the damage layers in wire-electrode cutting InSb wafers was about 14 μm which was less than that of the ID-cutting InSb wafers. This research result was of referential value to the mass production and subsequent processing of large-size InSb wafers.