| 基于分子束外延的6 in短波硅基碲镉汞材料的表面缺陷研究 |
| 投稿时间：2024-11-01 修订日期：2024-11-21 点此下载全文 |
| 引用本文：李震,王丹,姜梦佳,管崇尚,邢伟荣,折伟林,牛佳佳.基于分子束外延的6 in短波硅基碲镉汞材料的表面缺陷研究[J].红外,2025,46(5):11~16 |
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| 中文摘要:由于大规模碲镉汞红外焦平面探测器对大尺寸硅基碲镉汞材料的需求日益增长，针对基于分子束外延(Molecular Beam Epitaxy, MBE)的6 in短波硅基碲镉汞材料的表面宏观缺陷密度进行研究。使用扫描电子显微镜(Scanning Electron Microscopy, SEM)对材料表面缺陷进行分析，确定了缺陷种类及产生原因。通过对外延温区均匀性、束流均匀性和源炉稳定性进行改进，提高了材料的组分均匀性；通过材料表面缺陷控制及材料工艺参数优化，改进了基于分子束外延的6 in短波硅基碲镉汞材料制备技术，批量产出高均匀性和低表面缺陷密度的高质量6 in短波硅基碲镉汞材料。结果表明，材料中心处与边缘处的组分差距小于等于3.0%，表面宏观缺陷(大于2 μm)密度小于等于70 cm-2。 |
| 中文关键词:分子束外延 碲镉汞 表面缺陷 |
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| Study on Surface Defects of 6-in Short-Wave Silicon-Based HgCdTe Based on Molecular Beam Epitaxy |
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| Abstract:Due to the growing demand for large-scale silicon-based HgCdTe materials for large-scale HgCdTe infrared focal plane detectors, the surface macroscopic defect density of 6-in short-wave silicon-based HgCdTe materials based on molecular beam epitaxy (MBE) is studied. The surface defects of the materials are analyzed using scanning electron microscopy (SEM), and the types of defects and their causes are determined. The composition uniformity of the materials is improved by improving the uniformity of the epitaxial temperature zone, the beam uniformity, and the stability of the source furnace. The preparation technology of 6-in short-wave silicon-based HgCdTe materials based on molecular beam epitaxy is improved by controlling the surface defects of the materials and optimizing the material process parameters, and high-quality 6-in short-wave silicon-based HgCdTe materials with high uniformity and low surface defect density are mass-produced. The results show that the composition difference between the center and the edge of the material is less than or equal to 3.0%, and the surface macroscopic defect (larger than 2 μm) density is less than or equal to 70 cm-2. |
| keywords:molecular beam epitaxy HgCdTe surface defect |
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