| 硅基红外芯片抛光后的颗粒清洗机理研究 |
| 投稿时间：2024-10-21 修订日期：2024-11-04 点此下载全文 |
| 引用本文：马腾达,徐圣娴,李浩冉,时浩,王慧.硅基红外芯片抛光后的颗粒清洗机理研究[J].红外,2025,46(5):17~23 |
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| 中文摘要:硅基红外器件的背面抛光质量直接影响芯片的性能参数，抛光后的清洗处理也会影响后续工艺的可靠性。材料表面吸附颗粒的清洗是当前研究的热点。探讨了阴离子表面活性剂——十二烷基硫酸钠(Sodium Dodecyl Sulfate, SDS)对硅溶胶抛光后硅片颗粒的清洗效果，并采用分子模拟方法深入分析了清洗机理。结果表明，SDS浓度较高时，可在SiO2颗粒表面形成双层吸附形态并在最外围呈现负电荷状态。这与酸性环境中硅片表面所带的负电荷形成静电排斥力，进而起到有效清洗SiO2颗粒的效果。 |
| 中文关键词:Si基红外器件 硅片清洗 表面活性剂 分子模拟 |
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| Study on the Particle Cleaning Mechanism of Silicon-Based Infrared Chip After Polishing |
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| Abstract:The backside polishing quality of silicon-based infrared devices directly affects the performance parameters of the chips, and the cleaning treatment after polishing will also affect the reliability of subsequent processes. Cleaning of particles adsorbed on the surface of materials is a hot topic in current research. The cleaning effect of anionic surfactant (sodium dodecyl sulfate (SDS)) on silicon wafer particles after silica sol polishing is explored, and the cleaning mechanism is deeply analyzed using molecular simulation methods. The results show that when the concentration of SDS is high, a bilayer adsorption morphology can be formed on the surface of SiO2 particles, and a negative charge state is presented on the outermost layer. This forms an electrostatic repulsion force with the negative charge on the surface of the silicon wafer in an acidic environment, thereby effectively cleaning the SiO2 particles. |
| keywords:Si-based infrared device silicon wafer cleaning surfactant molecular simulation |
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