| 光导型石墨烯探测器暗电流抑制电路研究 |
| 投稿时间：2024-08-23 修订日期：2024-09-04 点此下载全文 |
| 引用本文：仝淅哲,申钧.光导型石墨烯探测器暗电流抑制电路研究[J].红外,2025,46(2):1~12 |
| 摘要点击次数: 150 |
| 全文下载次数: 90 |
|
|
| 中文摘要:针对光导型石墨烯探测器暗电流大的特点，在分析几种暗电流抑制电路的基础上，利用电容反馈跨阻放大器(Capacitive Trans-Impedance Amplifier, CTIA)积分电路设计了一种新型低温度系数暗电流抑制电路。仿真分析结果表明，该结构具有良好的暗电流抑制能力。相比于传统CTIA结构，积分饱和时间提升显著，并且具有良好的积分均匀性和输出线性度。在-20~40 ℃温度范围内，电流-温度误差率为0.15％，电压偏移量不到80 mV，能够在室温条件下保持良好的暗电流抑制功能。探测器偏置电压漂移改善88.7%，为探测器稳定工作提供了保障。同时，抑制电流的大小可调，为改善石墨烯基探测器像元的不均匀性和未来制备大规模的石墨烯基探测器阵列提供了参考。 |
| 中文关键词:光导型 石墨烯 暗电流抑制 电容反馈跨阻放大器 低温度系数 |
| |
| Study on Dark Current Suppression Circuit of Photoconductive Graphene Detector |
|
|
| Abstract:Aiming at the characteristics of large dark current of photoconductive graphene detector, based on the analysis of several dark current suppression circuits, a novel dark current suppression circuit with low temperature coefficient is designed by using the capacitive trans-impedance amplifier (CTIA) integration circuit. The simulation analysis results show that the structure has good dark current suppression capability. Compared with the traditional CTIA structure, the integral saturation time of this structure is significantly improved, and it has good integral uniformity and output linearity. In the temperature range of -20 ℃－40 ℃, the current-temperature error rate is 0.15%, and the voltage offset is less than 80 mV, which can maintain good dark current suppression function at room temperature. The detector bias voltage drift is improved by 88.7%, which provides a guarantee for the stable operation of the detector. At the same time, the suppression current is adjustable, which provides a reference for improving the non-uniformity of graphene-based detector pixels and preparing large-scale graphene-based detector arrays in the future. |
| keywords:photoconductive graphene dark current suppression capacitive trans-impedance amplifier low temperature coefficien |
| 查看全文 HTML 查看/发表评论 下载PDF阅读器 |