| 低缺陷3 in中波InAs/InAsSb材料分子束外延工艺研究 |
| 投稿时间：2024-07-22 修订日期：2024-08-15 点此下载全文 |
| 引用本文：闫勇,周朋,游聪娅,刘铭,胡雨农,金姝沛.低缺陷3 in中波InAs/InAsSb材料分子束外延工艺研究[J].红外,2025,46(4):11~19 |
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| 中文摘要:通过改变材料源的束流大小和材料生长温度对3 in 数字合金(Digital Alloy, DA)-nBn型InAs/InAs1-xSbx II类超晶格材料进行分子束外延工艺研究。结果表明，当Sb束流大小为3×10-7 torr、生长温度为470 ℃时生长的材料质量最好，材料表面上直径在3 μm以上的缺陷密度为64 cm-2，总厚度偏差为8.16 μm，材料相对于基准面的粗糙度均方根值为0.339 nm，－1级衍射卫星峰的半高宽为16 arcsec。所生长的材料平整均匀，具有较好的晶格质量。光致发光(Photoluminescence, PL)光谱结果显示，材料在75 K下的发光峰位于4.69 μm处；随着温度的升高，峰位产生红移。研究Sb束流大小与实验工艺的对应关系以及材料生长温度与材料缺陷的影响规律，对于生长高质量3 in InAs/InAs1-xSbx II类超晶格材料具有重要意义。 |
| 中文关键词:分子束外延 InAs/InAsSb GaSb衬底 |
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| Study on Molecular Beam Epitaxy Process of Low-Defect 3 in Mid-Wave InAs/InAsSb Materials |
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| Abstract:The molecular beam epitaxy process of 3 in digital alloy (DA)-nBn InAs/InAs1-xSbx type-II superlattice materials is studied by changing the beam size of the material source and the material growth temperature. The results show that the quality of the grown material is the best when the Sb beam size is 3×10-7 torr and the growth temperature is 470 ℃. The density of defects with a diameter of more than 3 μm on the surface of the material is 64 cm-2, the total thickness deviation is 8.16 μm, the root mean square value of the roughness of the material relative to the reference surface is 0.339 nm, and the full width at half maximum of the －1st order diffraction satellite peak is 16 arcsec. The grown material is flat and uniform, with good lattice quality. The photoluminescence (PL) spectroscopy results show that the luminescence peak of the material at 75 K is located at 4.69 μm; with the increase of temperature, the peak position produces a red-shift. The corresponding relationship between the Sb beam size and the experimental process, as well as the influence of material growth temperature and material defects are studied, which is of great significance for the growth of high-quality 3 in InAs/InAs1-xSbx type-II superlattice materials. |
| keywords:molecular beam epitaxy InAs/InAsSb GaSb substrate |
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