CdTe/ZnS膜层致密度对碲镉汞器件性能的影响研究
DOI:
CSTR:
作者:
作者单位:

作者简介:

通讯作者:

中图分类号:

基金项目:


Study on the Influence of CdTe/ZnS Film Density on the Performance of HgCdTe Devices
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    采用CdTe/ZnS双层钝化工艺对长波HgCdTe衬底进行表面钝化及工艺优化,并利用不同的工艺条件进行背面增透膜生长。通过对各工艺条件下制备的二极管器件膜层进行扫描电子显微镜(Scanning Electron Microscope, SEM)、原子力显微镜(Atomic Force Microscope, AFM)、I-V表征分析,研究了不同工艺条件下沉积CdTe/ZnS膜层的致密度对器件性能的影响。结果表明,致密度更高的CdTe/ZnS钝化膜层均匀,具有更好的表面状态;致密度更高的背面增透膜层附着力更强,表面缺陷更少,制备出的LW640-15探测器具有更高的性能。

    Abstract:

    The CdTe/ZnS double-layer passivation process was used to passivate the surface of the long-wave HgCdTe substrate and optimize the process, and different process conditions were used to grow the backside anti-reflection film. The film layers of the diode devices prepared under various process conditions were characterized by scanning electron microscope (SEM), atomic force microscope (AFM) and I-V curves, and the effect of the density of the CdTe/ZnS film layer deposited under different process conditions on the device performance was studied. The results show that the CdTe/ZnS passivation film layer with higher density is uniform and has a better surface state; the backside anti-reflection film layer with higher density has stronger adhesion and fewer surface defects, and the prepared LW640-15 detector has higher performance.

    参考文献
    相似文献
    引证文献
引用本文

徐港,戴永喜,何斌,等. CdTe/ZnS膜层致密度对碲镉汞器件性能的影响研究[J].红外,2024,45(12):19-25.

复制
相关视频

分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
文章二维码