| CdTe/ZnS膜层致密度对碲镉汞器件性能的影响研究 |
| 投稿时间：2023-11-23 修订日期：2023-11-29 点此下载全文 |
| 引用本文：徐港,戴永喜,何斌,郑天亮,王娇.CdTe/ZnS膜层致密度对碲镉汞器件性能的影响研究[J].红外,2024,45(12):19~25 |
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| 中文摘要:采用CdTe/ZnS双层钝化工艺对长波HgCdTe衬底进行表面钝化及工艺优化，并利用不同的工艺条件进行背面增透膜生长。通过对各工艺条件下制备的二极管器件膜层进行扫描电子显微镜(Scanning Electron Microscope, SEM)、原子力显微镜(Atomic Force Microscope, AFM)、I-V表征分析，研究了不同工艺条件下沉积CdTe/ZnS膜层的致密度对器件性能的影响。结果表明，致密度更高的CdTe/ZnS钝化膜层均匀，具有更好的表面状态；致密度更高的背面增透膜层附着力更强，表面缺陷更少，制备出的LW640-15探测器具有更高的性能。 |
| 中文关键词:碲镉汞 表面钝化 背面增透 致密度 |
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| Study on the Influence of CdTe/ZnS Film Density on the Performance of HgCdTe Devices |
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| Abstract:The CdTe/ZnS double-layer passivation process was used to passivate the surface of the long-wave HgCdTe substrate and optimize the process, and different process conditions were used to grow the backside anti-reflection film. The film layers of the diode devices prepared under various process conditions were characterized by scanning electron microscope (SEM), atomic force microscope (AFM) and I-V curves, and the effect of the density of the CdTe/ZnS film layer deposited under different process conditions on the device performance was studied. The results show that the CdTe/ZnS passivation film layer with higher density is uniform and has a better surface state; the backside anti-reflection film layer with higher density has stronger adhesion and fewer surface defects, and the prepared LW640-15 detector has higher performance. |
| keywords:HgCdTe surface passivation backside anti-reflection density |
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