| 分子束外延碲镉汞探测器的变结面积I-V测试研究 |
| 投稿时间：2023-11-02 修订日期：2023-11-30 点此下载全文 |
| 引用本文：赵成城,王丹,何斌,戴永喜.分子束外延碲镉汞探测器的变结面积I-V测试研究[J].红外,2024,45(3):1~6 |
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| 中文摘要:碲镉汞红外探测器的表面钝化处理对器件暗电流有较大影响，决定了器件的探测性能。为了研究表面钝化层不同生长方式对暗电流的抑制效果，使用分子束外延(Molecular Beam Epitaxy, MBE)系统在Si基衬底上生长碲镉汞材料，分别通过磁控溅射和原位钝化方法生长CdTe/ZnS钝化膜层。采用半导体工艺在碲镉汞材料上制备了变面积光伏探测器。通过测试不同钝化膜层器件的暗电流，分析零偏电阻和面积乘积(R0A)与周长面积之比(p/A)的关系。结果表明，磁控溅射生长钝化层的Si基碲镉汞器件存在较大的隧穿电流，而原位钝化生长钝化层的Si基碲镉汞器件能更有效地抑制表面漏电流。拟合器件R0A因子随PN结面积的变化，得出原位生长钝化层的器件具有更好的钝化效果。变面积器件的制备和测试能够有效且直观地反映器件性能。 |
| 中文关键词:碲镉汞 原位钝化 变结面积 暗电流测试 |
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| Study on Variable Junction Area I-V Test of Molecular-Beam-Epitaxy Mercury Cadmium Telluride Detectors |
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| Abstract:The surface passivation treatment of mercury cadmium telluride infrared detectors has a significant impact on the device′s dark current, which determines the device′s detection performance. In order to investigate the inhibitory effect of different growth methods of surface passivation layers on dark current, a molecular beam epitaxy system was used to grow mercury cadmium telluride material on a Si substrate. CdTe/ZnS passivation film layers were grown by magnetron sputtering and in-situ passivation methods, respectively. A variable area photovoltaic detector was prepared on HgCdTe material using semiconductor technology. By testing the dark current of devices with different passivation film layers, the relationship between zero bias resistance and area product (R0A) and the ratio of perimeter area (p/A) was analyzed. The result shows that Si-based mercury cadmium telluride devices with magnetron sputtering growth passivation layers exhibit significant tunneling currents, while Si-based mercury cadmium telluride devices with in-situ passivation growth passivation layers can more effectively suppress surface leakage currents. By fitting the variation of the R0A factor of the device with the PN junction area, it can be seen that devices with in-situ growth of passivation layers have better passivation effects. The preparation and testing of variable area devices can effectively and intuitively reflect device performance. |
| keywords:mercury cadmium telluride in-situ passivation variable junction area dark current test |
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