| 分子束外延中波/中波双色HgCdTe材料研究 |
| 投稿时间：2023-10-19 修订日期：2023-11-12 点此下载全文 |
| 引用本文：李震,王丹,邢伟荣,王丛,周睿,折伟林.分子束外延中波/中波双色HgCdTe材料研究[J].红外,2024,45(9):1~6 |
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| 中文摘要:采用分子束外延(Molecular Beam Epitaxy, MBE)法制备了高质量的npn型中波/中波双色HgCdTe材料。利用傅里叶变换红外光谱仪(Fourier Transform Infrared Spectrometer, FTIR)、二次离子质谱(Secondary Ion Mass Spectroscopy, SIMS）、X射线双晶衍射仪(X-Ray double-crystal Diffractometer, XRD)分别测试了材料组分、厚度、元素分布和平均半峰宽等参数。结果表明，材料底部n型吸收层的碲镉汞组分为0.318，厚度为7.15 μm；p型层的组分为0.392，厚度为2.47 μm；顶部n型吸收层的组分为0.292，厚度为4.71 μm。As掺杂浓度约为3×1018 cm-3，In掺杂浓度为4×1015 cm-3，平均半峰宽约为95 arcsec，表明该材料具有良好的质量。利用聚焦离子束(Focused Ion Beam, FIB)、扫描电子显微镜(Scanning Electron Microscope, SEM)、X射线能谱仪(Energy-Dispersive X-ray spectrometer, EDX)测试表征了HgCdTe外延材料表面缺陷的形貌，确认缺陷主要受生长温度和Hg/Te束流比等生长参数的影响。 |
| 中文关键词:HgCdTe 表面缺陷 原位掺杂 |
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| Study on Medium-Wave/ Medium-Wave Two-Color HgCdTe Materials by Molecular Beam Epitaxy |
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| Abstract:High-quality npn medium-wave/medium-wave two-color HgCdTe materials were prepared by molecular beam epitaxy. Fourier transform infrared spectroscopy (FTIR), secondary ion mass spectroscopy (SIMS) and X-ray double-crystal diffractometer (XRD) were used to test the material composition, thickness, element distribution, average half-peak width and other parameters. The results show that the HgCdTe composition of the bottom n-type absorption layer is 0.318 with a thickness of 7.15 μm, the composition of the p-type layer is 0.392 with a thickness of 2.47 μm, and the composition of the top n-type absorption layer is 0.292 with a thickness of 4.71 μm. The As doping concentration is about 3×1018 cm-3, the In doping concentration is 4×1015 cm-3, and the average half-peak width is about 95 arcsec, indicating that it has good quality. The surface defects of the HgCdTe epitaxial layer were characterized by focused ion beam (FIB), scanning electron microscope (SEM) and energy-dispersive X-ray spectrometer (EDX) tests. It is confirmed that the defects are mainly related to growth parameters such as growth temperature and Hg/Te beam-current ratio. |
| keywords:HgCdTe surface defect in-situ doping |
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