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7.5 μm像元间距红外探测器三维电极的制备与应用
投稿时间:2023-06-22  修订日期:2023-08-21  点此下载全文
引用本文:王格清,申淙,冯晓宇,张轶.7.5 μm像元间距红外探测器三维电极的制备与应用[J].红外,2024,45(1):12~19
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作者单位E-mail
王格清 华北光电技术研究所 zy_marburg@qq.com 
申淙 中国电子科技集团公司第45研究所  
冯晓宇 华北光电技术研究所  
张轶 华北光电技术研究所 zy_marburg@qq.com 
中文摘要:采用现有读出电路电极生长设备和直写式光刻设备开发了三维电极的制备工艺。在制备过程中,首先在读出电路表面制备三维电极,在碲镉汞芯片端生长铟饼,然后通过倒装互连工艺可以实现7.5 μm像元间距的1k×1k碲镉汞芯片与读出电路的互连。可变参数包括金属生长角度、生长速率、生长厚度以及金属种类等。经研究发现,通过该工艺制备的7.5 μm像元间距的三维电极高度可达到3.8 μm,高度非均匀性小于3%,可以经受7.6×10-5 N的压力。三维电极的应用,降低了倒装互连工艺对HgCdTe芯片平坦度和互连设备精度的要求,大幅提高了7.5 μm像元间距红外探测器的互连成品率。
中文关键词:碲镉汞  7.5 μm像元间距  三维电极
 
Preparation and Application of Three-Dimensional Micro-Tubes for 7.5 μm-Pitch Infrared Detectors
Abstract:A fabrication process for three-dimensional micro-tubes was developed using existing readout circuit electrode growth equipment and direct-write photolithography system. In the preparation process, the three-dimensional micro-tubes were first prepared on the surface of the readout circuit. The indium bumps were grown on the HgCdTe chip, and then flip-chip bonding was used to achieve interconnections between the 1k×1k array HgCdTe chip with 7.5 μm pitch and the readout circuit. The controllable parameters include metal growth angle, growth rate, thickness, and metal type, etc. It is found that the height of the three-dimensional micro-tubes with 7.5 μm pitch prepared by this process can reach 3.8 μm, the height non-uniformity is less than 3%, and it can withstand the pressure of 7.6×10-5 N. The application of the three-dimensional micro-tubes reduces the requirements for the flatness of HgCdTe chips and the precision of interconnection equipment in the flip-chip bonding process, significantly improving the yield of interconnected infrared detectors with 7.5 μm pitch.
keywords:HgCdTe  7.5 μm pitch  micro-tube
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