GaAs-based vertical-cavity surface-emitting laser (VCSEL) has been widely used in various fields since its introduction in 1977 with its advantages such as low threshold current, high beam quality, integration into two-dimensional arrays and easy single-mode maser. However, due to its small size, it is difficult to accurately control the accuracy in manufacturing, and it is easy to cause morphological damage to the mask and side wall during plasma etching, and too many by-products are generated in the etching process, which affects its application scope and improves the manufacturing difficulty. How to maintain high etching rate and reduce etching damage as much as possible has become a hot research topic. The research status and technical difficulties of GaAs-based VCSEL dry etching technology are analyzed, and the future development trend is prospected.