碲镉汞p-on-n双层异质结材料表面缺陷研究
DOI:
CSTR:
作者:
作者单位:

作者简介:

通讯作者:

中图分类号:

TN305

基金项目:


Research of Surface Defects from p-on-n HgCdTe Double-Layer Heterojunction Materials
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    对碲镉汞p-on-n双层异质结材料的表面缺陷进行了研究。材料表面缺陷会对后续器件的性能产生影响。利用光学显微镜观察外延完的材料表面,发现表面不规则块状缺陷和表面孔洞缺陷较为常见。使用共聚焦显微镜、扫描电子显微镜、能谱分析等测试手段分析发现,缺陷的形成原因是p型层生长过程中镉耗尽以及n型层生长过程中产生缺陷的延伸。

    Abstract:

    The surface defects of HgCdTe p-on-n double-layer heterojunction materials are studied. The surface defects of materials will affect the performance of subsequent devices. Through observing the surface of the epitaxial material with the optical microscope, it is found that the surface irregular blocky defects and surface hole defects are common. By using confocal microscope, scanning electron microscope, energy spectrum analysis and other testing methods, it is found that the defects originate from the depletion of cadmium in the growth process of p-type layer and the extension of defects in the growth process of n-type layer.

    参考文献
    相似文献
    引证文献
引用本文

郝斐,胡易林,邢晓帅,等.碲镉汞p-on-n双层异质结材料表面缺陷研究[J].红外,2022,43(12):15-19.

复制
相关视频

分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
文章二维码