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碲镉汞p-on-n双层异质结材料表面缺陷研究
投稿时间:2022-09-20  修订日期:2022-10-11  点此下载全文
引用本文:胡易林,邢晓帅,杨海燕,李乾,折伟林.碲镉汞p-on-n双层异质结材料表面缺陷研究[J].红外,2022,43(12):15~19
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作者单位
胡易林 华北光电技术研究所 
邢晓帅 华北光电技术研究所 
杨海燕 华北光电技术研究所 
李乾 华北光电技术研究所 
折伟林 华北光电技术研究所 
中文摘要:对碲镉汞p-on-n双层异质结材料的表面缺陷进行了研究。材料表面缺陷会对后续器件的性能产生影响。利用光学显微镜观察外延完的材料表面,发现表面不规则块状缺陷和表面孔洞缺陷较为常见。使用共聚焦显微镜、扫描电子显微镜、能谱分析等测试手段分析发现,缺陷的形成原因是p型层生长过程中镉耗尽以及n型层生长过程中产生缺陷的延伸。
中文关键词:碲镉汞  p-on-n  表面缺陷
 
Research of Surface Defects from p-on-n HgCdTe Double-Layer Heterojunction Materials
Abstract:The surface defects of HgCdTe p-on-n double-layer heterojunction materials are studied. The surface defects of materials will affect the performance of subsequent devices. Through observing the surface of the epitaxial material with the optical microscope, it is found that the surface irregular blocky defects and surface hole defects are common. By using confocal microscope, scanning electron microscope, energy spectrum analysis and other testing methods, it is found that the defects originate from the depletion of cadmium in the growth process of p-type layer and the extension of defects in the growth process of n-type layer.
keywords:mercury cadmium telluride  p-on-n  surface defect
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