| 碲镉汞红外探测器性能调控技术研究 |
| 投稿时间：2021-09-10 修订日期：2021-09-27 点此下载全文 |
| 引用本文：何温,王丛,田震,王鑫,高达,杨海燕,柏伟.碲镉汞红外探测器性能调控技术研究[J].红外,2021,42(12):6~14 |
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| 中文摘要:对影响Hg1-xCdxTe红外探测器性能的不同调控技术——包括材料调控(组分及温度、掺杂浓度、压强及应力等对材料性能的调控)、器件结构调控(n-on-p、p-on-n、p-i-n、n-B-n等器件结构的调控)和工艺调控(各种工艺调控对材料制备和器件制备等的影响)等——进行了简单介绍，以合理调控器件性能、有效降低器件暗电流、提高器件工作温度等，从而促进Hg1-xCdxTe红外探测器在降低成本、减小功耗、提高可靠性等方面的发展。 |
| 中文关键词:红外探测器 Hg1-xCdxTe 调控技术 |
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| Research on Performance Regulation Technology of HgCdTe Infrared Detector |
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| Abstract:Different regulation technologies that affect the performance of Hg1-xCdxTe infrared detectors are briefly introduced, including material regulation (composition and temperature, doping concentration, pressure, and stress, etc.), device structure regulation (n-on-p, p-on-n, p-i-n, n-B-n, etc.), and process regulation (the influence of various process regulation on material preparation and device preparation). This research aims to properly regulate device performance, effectively reduce the dark current of the device, and improve the operating temperature of the device, so as to promote the development of Hg1-xCdxTe infrared detectors in reducing costs, decreasing power consumption, and improving reliability. |
| keywords:infrared detector Hg1-xCdxTe regulation technology |
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