| II类超晶格探测器芯片背增技术研究 |
| 投稿时间：2021-08-12 修订日期：2021-09-26 点此下载全文 |
| 引用本文：任秀娟,崔戈,李春领,冯晓宇,李海燕,宁提,祁娇娇,刘铭.II类超晶格探测器芯片背增技术研究[J].红外,2021,42(12):15~20 |
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| 中文摘要:主要介绍了II类超晶格探测器芯片双波段背增膜在探测器中的作用及其膜系设计与制备工艺。该膜的作用是减小探测器芯片表面在响应波段(3～5 μm及7～9 μm)对红外光的反射率，增强芯片的光响应率，从而提高芯片性能。研究并解决了背增膜在设计与制备工艺中的主要技术问题。根据探测器的使用环境对薄膜进行了相应的牢固性实验及测试。结果表明，此薄膜的光谱响应率和牢固度能充分满足探测器的要求。目前这项背增透薄膜制备工艺已是II类超晶格探测器生产中不可缺少的工艺步骤，应用前景良好。 |
| 中文关键词:双色红外探测器 II类超晶格 锑化镓 背增膜 |
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| Research on the Back-adding Technology of Type-II Superlattice Detector Chip |
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| Abstract:It mainly introduces the function of the dual-band back-adding film of type-II superlattice detector chip in the detector and its membrane system design and preparation process. The function of the film is to reduce the reflectivity of infrared light on the surface of the detector chip in the response band (3-5 μm and 7-9 μm), enhance the light response rate of the chip, that is, improve the performance of the chip. The main technical problems in the design and preparation of the back-adding film are studied and solved. According to the use environment of the detector, the corresponding firmness experiment, test and analysis of the film are carried out to draw conclusions. The results show that the spectral responsivity and firmness of this film can fully meet the requirements of the detector. At present, the preparation process of the back-adding film is an indispensable process step in the production process of type II superlattice detector. The application prospect is good. |
| keywords:dual-band infrared detector type-II superlattice GaSb back-adding film |
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