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碲锌镉衬底重复利用技术研究
投稿时间:2021-08-05  修订日期:2021-08-17  点此下载全文
引用本文:聂媛,李乾.碲锌镉衬底重复利用技术研究[J].红外,2021,42(12):21~25
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作者单位E-mail
聂媛 中国电子科技集团公司第十一研究所 nieyuan@cetc.com.cn 
李乾 中国电子科技集团公司第十一研究所  
中文摘要:芯片制备工艺完成后,给芯片留有一定厚度的衬底,同时利用丝切割技术将多余的碲锌镉衬底取下,并对其进行重复抛光处理。碲锌镉衬底的锌值分布及半高宽(Full Width at Half Maximum, FWHM)测试结果表明,碲锌镉衬底质量较好,可以再次用来制备液相外延碲镉汞薄膜。该薄膜经过标准探测器芯片工艺后,性能合格。该研究使原本要完全去除的衬底得以重复利用,提高了碲锌镉衬底的利用率,降低了探测器的制造成本。
中文关键词:碲锌镉  衬底  再次抛光  重复利用
 
Research on Reutilization Technology of CdZnTe Substrate
Abstract:After the chip preparation process is completed, a certain thickness of the substrate is left for the chip, the excess cadmium zinc telluride substrate is removed by wire sawing technology, and then the polishing process is repeated. The Zn composition distribution and full width at half maximum (FWHM) test results of the cadmium zinc telluride substrate show that the CdZnTe substrate is of good quality and can be used to prepare the liquid phase epitaxial HgCdTe thin-film again. The properties of the newly prepared HgCdTe are qualified after standard detector chip technology. This research allows the reuse of the original substrate that is originally to be completely removed, improves the utilization rate of the CdZnTe substrate, and reduces the manufacturing cost of the detector.
keywords:CdZnTe  substrate  repolish  reutilization
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