| 基于分子束外延的4 in硅基碲镉汞材料工艺研究 |
| 投稿时间：2020-09-21 修订日期：2020-10-14 点此下载全文 |
| 引用本文：高达,李震,王丛,王经纬,刘铭,宁提.基于分子束外延的4 in硅基碲镉汞材料工艺研究[J].红外,2021,42(3):6~11 |
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| 中文摘要:现阶段，大面阵碲镉汞红外焦平面探测器的需求持续增加，面向更大尺寸的碲镉汞材料制备技术成为了研究热点。对4 in硅基碲镉汞材料外延技术进行了研究。通过提升设备参数的稳定性、控制外延片的平整度以及优化材料工艺参数等一系列手段，突破了大尺寸硅基碲镉汞材料工艺的关键技术瓶颈，并制备出了高平整度、高均匀性、低缺陷率、高质量的4 in硅基碲镉汞材料。结果表明，该材料的双晶衍射半峰宽小于等于90 arcsec，表面宏观缺陷密度小于等于100 cm-2，表面平整度小于等于15 μm。 |
| 中文关键词:4 in硅衬底 分子束外延 碲镉汞 |
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| Research on the Technology of 4 in HgCdTe on Silicon Substrate by Molecular Beam Epitaxy |
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| Abstract:At present, the demand for large-format HgCdTe infrared focal plane array (IRFPA) detectors continues to increase, and the development of larger HgCdTe material technology has become a research hotspot. The 4 in silicon-based HgCdTe epitaxy technology is studied. Through a series of measures such as improving the stability of equipment parameters, controlling the flatness of epitaxial wafers, and optimizing material process parameters, the key technical bottleneck of the large-size silicon-based HgCdTe material process has been broken through. 4 in silicon-based HgCdTe materials with low flatness, high uniformity, low defect rate and high quality are obtained. The results show that the material′s full width at half maximum (FWHM) is not more than 90 arcsec, the surface macro defect density is not more than 100 cm-2, and the surface flatness is not more than 15 μm. |
| keywords:4 in Si substrate MBE HgCdTe |
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