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富汞热处理对碲镉汞电学性能的影响
投稿时间:2020-09-08  修订日期:2020-09-14  点此下载全文
引用本文:王鑫,赵东生.富汞热处理对碲镉汞电学性能的影响[J].红外,2020,41(12):25~32
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作者单位E-mail
王鑫 华北光电技术研究所 wangxx_93@163.com 
赵东生 华北光电技术研究所  
中文摘要:对液相外延方法(LPE)生长的碲镉汞(HgCdTe)材料进行了闭管富汞热处理,并研究了不同的热处理时间和热处理温度对碲镉汞材料电学性能的影响。HgCdTe材料经过富汞热处理后可以有效降低材料内的缺陷尺寸和密度。该方法不仅可以降低材料内的位错密度,而且还可以完成材料P型到N型的转变。工艺中的低温热处理对HgCdTe材料的电学性能有较大影响。研究发现,随着低温热处理时间的持续增加,HgCdTe材料的载流子浓度会明显增加。而当低温热处理温度在210℃~250℃范围内变化时,若保持低温热处理时间不变,则热处理后HgCdTe材料的载流子浓度在一定范围内波动,且无明显变化。通过对HgCdTe器件进行I-V曲线测试以及最终的组件测试,发现热处理后载流子浓度在1E13~1E14cm-3范围内的HgCdTe芯片就可以得到很好的测试结果。
中文关键词:碲镉汞  闭管  热处理  电学性能
 
Influence of mercury-rich annealing on electrical properties of HgCdTe
Abstract:In this paper, a closed-tube mercury-rich annealing was performed on the HgCdTe material grown by the liquid phase epitaxy (LPE) method. And the effects of different annealing time and annealing temperature on the electrical properties of HgCdTe material were studied. After the annealing, the size and density of defects in the material can be reduced, and the dislocation density in the material can also be reduced, and the material can be transformed from P-type to N-type. In the process, the low temperature annealing has a great influence on the electrical properties of HgCdTe materials, after the study, its been found that with the continuous increase of the annealing time, the carrier concentration of HgCdTe materials will be increased significantly. And when the annealing temperature verify in the range of 210℃-250℃, keeping the annealing time unchanged, the carrier concentration of HgCdTe material fluctuates within a certain range after annealing, after the IV test of the HgCdTe device and the final component test, it is found that when the carrier concentration is between 1E13-1E14 cm-3 after annealing, the test results were good.
keywords:HgCdTe  closed-tube  annealing  electrical properties
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